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| MPSH24 / MMBTH24 Discrete POWER & Signal Technologies MPSH24 MMBTH24 C E C BE TO-92 SOT-23 Mark: 3A B NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. See MPSH11 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 30 40 4.0 50 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH24 625 5.0 83.3 200 Max *MMBTH24 225 1.8 556 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c)1997 Fairchild Semiconductor Corporation MPSH24 / MMBTH24 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, I E = 0 I E = 10 A, I C = 0 VCB = 15 V, IE = 0 30 40 4.0 50 V V V nA ON CHARACTERISTICS hFE DC Current Gain I C = 8.0 mA, VCE = 10 V 30 SMALL SIGNAL CHARACTERISTICS fT Ccb Current Gain - Bandwidth Product Collector-Base Capacitance I C = 8.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 400 0.36 MHz pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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